| 摘要 |
<P>PROBLEM TO BE SOLVED: To both optimize antireflection effects and microfabricate a transistor having an LDD structure. Ž<P>SOLUTION: A manufacturing method of a solid-state imaging device includes: a step of forming a gate electrode 102a of a transfer transistor 502, a photo diode 501 and an n-type low concentration region 130 serving as a drain of the transfer transistor 502; a step of forming a first silicon oxide film 113b and a first side spacer 150a on the photo diode 501 and on a side face of the gate electrode 102a; a step of laminating a first silicon nitride film 120a and a second side spacer 150b on the first silicon oxide film 113b and the first side spacer 150a; a step of forming an n-type high concentration region 103 by implanting impurities using the first side spacer 150a and the second side spacer 150b as a mask; and a step of forming a second silicon nitride film 120b on the first silicon nitride film 120a. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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