| 摘要 |
PROBLEM TO BE SOLVED: To enhance in-plane uniformity of a plasma process in a wide RF frequency area and also in a wide RF power area. SOLUTION: A susceptor (a lower electrode) 12 with a semiconductor wafer A placed thereon and an upper electrode 38 are arranged in parallel so as to face each other in a chamber 10. The first high frequency for generating plasma is applied to the susceptor 12 from the first high frequency power source 32. The side surfaces and upper surface peripheral part (an edge) of the susceptor 12 are covered with an RF grounding member 18 extending vertically upward from the bottom wall of the chamber 10 by holding a dielectric body 16 between the susceptor 12 and the member 18. A fin member 25 is arranged on an exhaust ring 22 to be attached to the upper part of an exhaust passage 20. COPYRIGHT: (C)2010,JPO&INPIT |
