| 摘要 |
<P>PROBLEM TO BE SOLVED: To shorten a time for etching a peeling buffer layer when manufacturing a device of a crystal member of a group III nitride. <P>SOLUTION: A manufacturing method includes a process for forming a buffer layer on a base substrate, a process for forming a mask pattern covering a part of the buffer layer on the buffer layer, a process for growing a crystal of a group III nitride from a region exposed by the mask pattern on a surface of the buffer layer and forming a structure where a plurality of crystal members are arranged with gaps therebetween so that they partially cover the buffer layer and the mask pattern, a process for selectively etching the mask pattern by using a first etchant of the mask pattern and forming a route for supplying a second etchant of the buffer layer and a separating process for supplying the second etchant through the gap and the route, selectively etching the buffer layer, separating the plurality of crystal members from the base substrate and separating them from one another. <P>COPYRIGHT: (C)2010,JPO&INPIT |
