发明名称 METHOD FOR PREPARING SUBSTRATE HAVING MONOCRYSTALLINE THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for readily manufacturing a substrate having a monocrystalline thin film substantially free of crystal defects, without the use of special substrates. SOLUTION: In a method of manufacturing a substrate having monocrystalline thin film, a monocrystalline thin film is formed on a handle substrate with steps of at least: a step (A) of preparing a donor substrate and a handle substrate; a step (B) of stack-growing a monocrystalline thin film on a donor substrate; a step (C) of implanting ions in the monocrystalline layer on the donor substrate, on which a monocrystalline layer is formed to form an ion-implanted layer; a step (D) of bonding the surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step (E) of peeling the bonded donor substrate off at the ion-implanted layer in the monocrystalline layer. At least the steps (A) to (E) are repeatedly performed using, as a donor substrate, the handle substrate on which the monocrystalline thin film is formed. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009231816(A) 申请公布日期 2009.10.08
申请号 JP20090028783 申请日期 2009.02.10
申请人 SHIN ETSU CHEM CO LTD 发明人 KUBOTA YOSHIHIRO;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;AKIYAMA SHOJI;NOJIMA YOSHIHIRO
分类号 H01L21/20;C30B19/12;C30B23/00;C30B25/18;H01L21/02 主分类号 H01L21/20
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