GROWTH OF POLYCRYSTALLINE 3C-SIC FILMS ON ALN BUFFER LAYER FOR MEMS OR NEMS APPLICATIONS

摘要

PURPOSE: A method for growing a polycrystalline silicon-carbide film for a micro or nano electromechanical system on an aluminum-nitride buffer layer is provided to reduce a stress generated by lattice mismatch of SiC and Si. CONSTITUTION: An aluminum-nitride is deposited on a silicon substrate through magnetron sputtering(S10). A reaction tube of a atmospheric pressure high temperature chemical vapor deposition apparatus is initialized in order to deposit 3C-SiC on the silicon substrate(S20). The silicon substrate is mounted in a central part of the reaction tube in order to be horizontally positioned with a main carrier gas flow of the reaction tube(S30). A graphite susceptor in which silicon-carbide is coated is mounted on the silicon substrate(S40). A 3C-SiC film is grown by injecting Hexamethyldisilane(S50).