COMPOSITION FOR MANUFACTURING SIO2 RESIST LAYERS AND METHOD OF ITS USE
摘要
The present invention relates to compositions, which are useful for the generation of patterned or structured SiO2-layers or of SiO2-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.
申请公布号
WO2009118083(A2)
申请公布日期
2009.10.01
申请号
WO2009EP01465
申请日期
2009.03.02
申请人
MERCK PATENT GMBH;STOCKUM, WERNER;KOEHLER, INGO;MEIJER, ARJAN;BROOKES, PAUL CRAIG;PATTERSON, KATIE;JAMES, MARK
发明人
STOCKUM, WERNER;KOEHLER, INGO;MEIJER, ARJAN;BROOKES, PAUL CRAIG;PATTERSON, KATIE;JAMES, MARK