| 摘要 |
<p>PURPOSE: A non-volatile memory device and method of fabricating the same are provided to improve the program threshold static pressure distribution characteristic due to the density extension of the second impurity elements of the grain. CONSTITUTION: The method of manufacturing the non-volatile memory device comprises as follows. The tunnel insulating layer(304) is formed on the semiconductor substrate(302). By using the impurity-containing gas and the silicon source gas including the first impurity elements, the polysilicon layer having the first impurity elements to the grain boundary is formed on the tunnel insulating layer. The second impurities are distributed on the grain of the polysilicon layer.</p> |
