发明名称 SUBSTRATE PROCESSING METHOD, AND APPARATUS THEREFOR
摘要 <p>There is provided a process for treating a substrate by removing organic pollutant on the surface of the substrate using mixed gas of wet ozone-containing gas and basic gas, wherein the introduction amount of basic gas is controlled, thereby achieving complete prevention of corrosion of metal wiring previously formed on the substrate, and an apparatus therefor. The apparatus for treating a substrate of the present invention comprises a substrate heating means (4) for keeping the substrate at temperature higher than room temperature, a wetting means (7) for obtaining wet ozone-containing gas, a supplying means (5) for supplying wet ozone-containing gas to substance to be treated on the substrate surface, a gas sending tube (8) for connecting the wetting means and the supplying means, a supplying means (18) for supplying basic gas-containing gas to substance to be treated on the substrate surface and a gas heating means (9) for heating each of the wetting means, the supplying means and the gas sending tube to temperature equal to or higher than that of the substrate. &lt;IMAGE&gt;</p>
申请公布号 EP1255287(A1) 申请公布日期 2002.11.06
申请号 EP20010936972 申请日期 2001.06.12
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA;SPC ELECTRONICS CORPORATION 发明人 NODA, SEIJI;HORIBE, HIDEO;MIYAMOTO, MAKOTO;OYA, IZUMI;KUZUMOTO, MASAKI
分类号 H01L21/306;B08B7/00;H01L21/00;H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):H01L21/304;B08B3/10 主分类号 H01L21/306
代理机构 代理人
主权项
地址