发明名称 |
GaN BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME |
摘要 |
A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer. |
申请公布号 |
US2009242874(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
US20090432397 |
申请日期 |
2009.04.29 |
申请人 |
SONY CORPORATION |
发明人 |
BIWA GOSHI;OKUYAMA HIROYUKI |
分类号 |
H01L33/06;H01L33/32;H01L33/40;H01L33/58;H01L33/60;H01L33/62 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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