发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can prevent leakage of process gas from a gas supply nozzle connection part for introducing the process gas to a process chamber to an external, can prevent breakage in mounting a gas supply nozzle, and can easily mount the gas supply nozzle. SOLUTION: The substrate processing apparatus includes: the process chamber 61 for accommodating stacked substrates 4; a heating means 58 for heating an inside of the process chamber to a predetermined temperature; a gas supply means for supplying predetermined process gas to the process chamber; and exhaust means 62, 63, 64 for exhausting the inside of the process chamber. The gas supply means includes: the gas supply nozzle 66 having a straight pipe shape and vertically arranged in a stacked direction of the substrates; a metal pipe 65 supporting the gas supply nozzle; and a manifold 2 forming a lower part of the process chamber. The metal pipe has: a first part extending from an outside of the process chamber to the inside of the processes chamber through the manifold; and a second part connected to the first part and extending in the stacked direction. The gas supply nozzle is fitted to and supported by the second part. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009224765(A) 申请公布日期 2009.10.01
申请号 JP20090010273 申请日期 2009.01.20
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANABE JUNICHI;O KETSU
分类号 H01L21/205;C23C16/455 主分类号 H01L21/205
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