A1N BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE USING THE SAME AND METHOD FOR PRODUCING THE SAME

摘要

Disclosed is an AlN single crystal bulk, which, even when a single crystal of a dissimilar material is used as a crystal, suffers from no significant defects and has high quality. Also disclosed are a process for producing the AlN single crystal bulk and a semiconductor device. The production process is characterized in that a plane inclined by 10 to 80 degrees to a C plane is selected as a surface (1a) of a hexagonal single crystal substrate which is a seed crystal (1) (Fig. 1 (a)) and an AlN single crystal (2) is grown as a growth plane (2a) on the surface (1a) by a sublimation method (Fig. 1(b)).