| 摘要 |
A thin-film-transistor (TFT) structure, a pixel structure and a manufacturing method thereof are provided. The TFT structure is formed in the pixel structure of a liquid crystal display (LCD). The TFT structure comprises a gate, a first dielectric layer, a patterned semiconductor layer, a second dielectric layer and a third dielectric layer stacked sequentially. The second dielectric layer and the third dielectric layer are formed on part of the patterned semiconductor layer to define a covered region and an uncovered region on the patterned semiconductor layer. The uncovered region of the second dielectric layer and the third dielectric layer jointly define an opening, which has at least one top lateral dimension and a bottom lateral dimension smaller than the top lateral dimension. Thereby, a lightly doped structure is formed in a portion of the covered region via the second dielectric layer after ion implantation. |
