| 摘要 |
<P>PROBLEM TO BE SOLVED: To further reduce the aggregate of point defects undetectable by a secco etching method, in a method of manufacturing a silicon wafer, and the silicon wafer. Ž<P>SOLUTION: The method has a heat treatment step of heat-treating a silicon wafer W cut out from an ingot made of a perfect region [P] in atmosphere gas G1, wherein the atmosphere gas is at least one of inert gas or reducing gas, and the temperature of the heat treatment is ≥1,100°C, where [I] is a region in which silicon type point defects between grids within a silicon single crystal ingot dominantly exist, [V] is a region in which hole type point defects dominantly exist, and [P] is a perfect region in which the number of aggregates of the silicon type point defects between grids and the number of aggregates of the hole type point defects are below a minimum detectable value by the secco etching method. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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