| 摘要 |
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOxNy is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNy is formed under the active layer. The active layer includes a metal element at a concentration of 1x1015 to 1x1019 cm-3 and hydrogen at a concentration of 2x1019 to 5x1021 cm-3.
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