| 摘要 |
A thermally activated batch process is disclosed for forming thin material layers in semiconductor devices including the establishment of an overheating temperature profile prior to actually forming a material layer, for instance, by deposition, so that a gas depletion at the centre of the substrate during the deposition process be compensated for. Thus, enhanced thickness uniformity for thin material layers in the range of 1 to 50 nanometers may be obtained without additional process time or even at a reduced process time.
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