发明名称 EXPOSURE MASK AND METHOD FOR FORMING OF SEMICONDUCTOR DEVICE USING THE SAME
摘要 <p>PURPOSE: An exposure mask and a method for forming a semiconductor device using the same are provided to stably form a cell pattern of a cell array region and a frame item of a scribe lane region. CONSTITUTION: An exposure mask includes a cell pattern and a light shielding pattern. The cell pattern is formed on a cell array region(A). The light shielding pattern is formed on a scribe lane region(B), and protects a frame item pattern formed on the scribe lane region. The frame item pattern includes one of an alignment key, a die fit target, an overlay vernier, a critical dimension bar, and a combination thereof. The exposure mask is applied to a negative type DPT(Double Patterning Technology).</p>
申请公布号 KR20090103520(A) 申请公布日期 2009.10.01
申请号 KR20080029179 申请日期 2008.03.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 MA, WON KWANG
分类号 H01L21/027 主分类号 H01L21/027
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