| 摘要 |
PURPOSE: The vertical structured LED using group 3 family nitride semiconductor prevents the current injection of the one-sided vertical direction and improve the performance of LED can be by accelerating the current spreading of the horizontal direction. CONSTITUTION: The vertical structured LED using group 3 family nitride semiconductor includes the n-type ohmic contact electrode structure(303), the group 3 family nitride-based semiconductor light-emitting diode device of multilayer structure, the p-type electrode structure(701), and the heat sink support stand(302). The n-type nitride system clad layer(301), the nitride system active layer(401), the p-type nitride system clad layer(501), and the current spreading layer(601) are successively laminated on the group 3 family nitride-based semiconductor light-emitting diode device. The heat sink support stand is formed at the lower part of the p-type electrode structure. |
