PHOTOELECTRIC CONVERSION DEVICE

摘要

Provided is a large-area photoelectric conversion device having a high conversion efficiency and an excellent mass-production efficiency. The photoelectric conversion device (100) includes a photoelectric conversion layer (3) containing a crystalline silicone layer formed on a substrate (1). The photoelectric conversion device (100) has a distribution in the substrate as follows: the crystalline silicone layer has a crystalline silicon i-layer (42); the average value of the Raman peak ratio of the Raman peak intensity of the crystalline silicone phase with respect to the Raman peak intensity of the non-crystalline silicon phase in the crystalline silicone i-layer (42) is not smaller than 4 and not greater than 8. The standard deviation of the Raman peak ratio is not smaller than 1 and not greater than 3; and the ratio of the region where the Raman peak ratio is not greater than 4 is not smaller than 0% and not greater than 15%. The photoelectric conversion layer (3) in the substrate (1) has a size not smaller than 1 m x 1 m. The average value of the Raman peak ratio in the crystalline silicone i-layer (42) is not smaller than 5 and not greater than 8. The standard deviation of the Raman peak ratio is not smaller than 1 and not greater than 3. The ratio of the region where the Raman peak ratio is not greater than 4 is not smaller than 0% and not greater than 10%.