BORON-DOPED ZINC OXIDE BASED TRANSPARENT CONDUCTING FILM AND MANUFACTURING METHOD OF THEREOF

摘要

Disclosed herein is a method of manufacturing a boron- additional doped zinc oxide based transparent conductive film on a substrate, including: additional doping an aluminum(Al)-doped ZnO target or a gallium(Ga)-doped ZnO target with boron (B) to form a transparent conductive film (Sl); and depositing the transparent conductive film on a substrate (S2). The boron- additional doped zinc oxide based transparent conductive film manufactured using the method is advantageous in that its electrical and optical properties are realized to such a degree that it replaces ITO. In particular, the boron-additional doped zinc oxide based transparent conductive film is advantageous in that it exhibits good properties when it is used in a flexible substrate. Moreover, the method of manufacturing the boron- additional doped zinc oxide based transparent conductive film is advantageous in that the structural stability of a thin film is improv ed.