发明名称 |
LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light.</p> |
申请公布号 |
WO2009120998(A2) |
申请公布日期 |
2009.10.01 |
申请号 |
WO2009US38628 |
申请日期 |
2009.03.27 |
申请人 |
NITEK, INC.;KHAN, ASIF;FAREED, QHALID;ADIVARAHAN, VINOD |
发明人 |
KHAN, ASIF;FAREED, QHALID;ADIVARAHAN, VINOD |
分类号 |
H01L33/00;H01L33/12;H01L33/22;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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