THINFILM DEPOSITION METHOD, THINFILM DEPOSITION APPARATUS, AND THINFILM SEMICONDUCTOR DEVICE

摘要

A substrate holding unit, a plasma treatment chamber, and a nanoparticle supplying chamber are housed in a single chamber. The substrate holding unit holds a substrate. The plasma treatment chamber includes a gas passage for introducing a source gas to a vicinity of the substrate and a plasma generating unit that generates a plasma from the source gas. The nanoparticle supplying chamber includes a spraying member for spraying a nanoparticle-containing medium onto a surface of the substrate.