| 摘要 |
PURPOSE: A thermal-type infrared solid-state imaging device is provided to improve thermal response characteristic of a pixel without deteriorating incident infrared absorbtivity. CONSTITUTION: The thermal-type infrared solid-state imaging device includes the substrate, the infrared detector, and the eaves portion(12). In a substrate, the integrated circuit for deciphering a signal is formed. The infrared detector has the supporting part including a diaphragm, and the wiring at least. The diaphragm includes the temperature detection part. The wiring electrically connects the temperature detection part and integrated circuit of a diaphragm. The eaves portion has the first portion(12a), the second portion(12b), and the third site(12c). The first portion is extended to the outside of a diaphragm. The first portion of the eaves portion is thicker than the thickness of the second portion and the third portion.
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