THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE

摘要

PURPOSE: A thin film transistor substrate, display device including the same, and method of manufacturing the thin film transistor substrate are provided to form a semiconductor substrate having small oxygen defect and good conductivity. CONSTITUTION: The thin film transistor substrate includes insulating plates(1,10), the gate electrode(2), the semiconductor layer(4), the gate insulating layer(3), and the source electrode(5) and drain electrode(6). The gate electrode is formed on the insulating plate. The semiconductor layer includes the metal oxide. The semiconductor layer has the 3%oxygen defect. The semiconductor layer is doped with h the concentration of 0.3 / cm^3 or 0.01 of 3d transition metal. The gate insulating layer is formed between the gate electrode and semiconductor layer. The source electrode and drain electrode are formed on the semiconductor layer.