| 摘要 |
<p>PURPOSE: A method of manufacturing the semiconductor device is provided to perform a patterning of less than 15 nm by two SPT processes. CONSTITUTION: The etched layer(300), the first TEOS(310), the first amorphous carbon layer(320), the second TEOS(330), the first polysilicon, the second amorphous carbon layer, and the photoresist pattern are formed on the semiconductor substrate. The photoresist pattern is patterned by the mask which has two times as the pitch of the device pitch. The second amorphous carbon layer pattern is formed by using the photoresist pattern as a mask. The first polysilicon pattern(340') is formed by using the first spacer nitride pattern as a mask. The second polysilicon are formed at the upper part of the whole surface. The first TEOS pattern is formed by using the first amorphous carbon layer pattern as a mask.</p> |
