发明名称 |
Method of forming the semiconductor device |
摘要 |
Example embodiments provide a semiconductor device and a method of forming the same. According to the method, a capping insulation pattern may be formed to cover the top surface of a filling insulation pattern in a trench. The capping insulation pattern may have an etch selectivity according to the filling insulation pattern. As a result, the likelihood that the filling insulation layer may be etched by various cleaning processes and the process removing the buffer insulation pattern may be reduced or prevented.
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申请公布号 |
US7595253(B2) |
申请公布日期 |
2009.09.29 |
申请号 |
US20070797827 |
申请日期 |
2007.05.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON II-YOUNG;SHIN HONG-JAE;LEE NAE-IN;CHOO JAE-OUK;KOO JA-EUNG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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