DRAM INCLUDING MICRO-ELECTRO MECHANICAL SYSTEM AND METHOD OF MANUFACTURING THE SAME
摘要
PURPOSE: A DRAM including an electrical and mechanical device and a manufacturing method thereof are provided to classify the data in a cell by reducing a charge leakage of a capacitor. CONSTITUTION: A DRAM device includes a bit line(104), a contact plug(136), a conductive beam(160), a word line(146), and a capacitor(152). The bit line is located on a substrate(100). The contact plug is connected to the upper part of the bit line. The conductive beam is connected to the upper part of the contact plug. The conductive beam has a horizontal blade shape protruded to the side to be parallel to the substrate. A word line is separated from the conductive beam. A signal for mechanically moving the conductive beam is applied to the word line. The capacitor is shorted or opened with the conductive beam by the movement of the conductive beam.
申请公布号
KR20090101587(A)
申请公布日期
2009.09.29
申请号
KR20080026812
申请日期
2008.03.24
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, MIN SANG;CHO, KEUN HWI;BAE, HYUN JUN;LEE, JI MYOUNG;KIM, DONG WON;SEO, JUN;JANG, WEON WI