发明名称 |
Image sensor and method of manufacturing the same |
摘要 |
An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.
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申请公布号 |
US7595519(B2) |
申请公布日期 |
2009.09.29 |
申请号 |
US20070682550 |
申请日期 |
2007.03.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-JIN;SUN YO-HAN;OH TAE-SEOK;JOO SUNG-JAE;KIM BUM-SUK;JANG YUN-HO;KIM SAE-YOUNG;YUK KEUN-CHAN |
分类号 |
H01L31/062 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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