| 发明名称 |
High-voltage discharging reactor processing exhausted hydrogen gas |
| 摘要 |
The present invention provides a reactor utilizing high-voltage discharge for processing exhausted hydrogen gas emitted during membrane plating, etching, or washing of semiconductors, where higher than 95% of destruction and removal efficiency (DRE) of hydrogen gas is obtained.
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| 申请公布号 |
US7594810(B2) |
申请公布日期 |
2009.09.29 |
| 申请号 |
US20050260427 |
申请日期 |
2005.10.28 |
| 申请人 |
ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH |
发明人 |
TZENG CHIH-CHING;LIN DEN-LIAN;CHEN SHIAW-HUEI;YANG MING-SONG;YAN JYH-MING;YU YUH-JENQ |
| 分类号 |
F23L7/00;F23D14/00 |
主分类号 |
F23L7/00 |
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