| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film-forming device and a film formation method capable of improving a film formation atmosphere, and to form a film having good characteristics by the device and the method. <P>SOLUTION: The film formation method comprises: a first process for discharging a liquid material 3 onto a substrate S1; and a second process for mounting the substrate on a stage 15 in a treatment chamber to heat the liquid material, and arranging a cover 17 on the stage so that it covers the substrate to heat the liquid material while supplying inert gas N<SB>2</SB>into the cover. The second process is performed while discharging the inert gas, supplied to the cover, from a space 17c at the bottom of the sidewall of the cover. By the method, heat treatment is performed while the cover restricts ambient gas with which the liquid material on the substrate can come into contact. Also, the heat treatment is performed while continuously supplying clean inert gas onto the liquid material on the substrate, and discharging impurities, such as reactive gas (cracked gas) generated by heating, to the outside of the cover. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
