| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a CMP polishing solution with sufficiently fast polishing speed on a silicon oxide film, capable of stably polishing the film at high polishing speed with variations control, and to provide a method of polishing a substrate and electronic components. <P>SOLUTION: The CMP polishing solution contains a conductivity adjusting agent, an inorganic abrasive, and a dispersant; and has conductivity of 8 mS/m to 1,000 mS/m, and pH of 3.0 to 7.0. The polishing method includes a step of compressively applying a substrate on which a polished film is formed, onto a polishing cloth of a polishing fixed platen; and polishing a substrate by moving the substrate relatively to the polishing fixed platen for polishing the substrate, while feeding the CMP polishing solution between the polished substrate and the polishing cloth. The polished substrate polished by the method is used for the electronic components. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
