| 摘要 |
PROBLEM TO BE SOLVED: To provide a fieldeffect transistor whose stacking fault is small in density using a group-III nitride semiconductor having a nonpolar surface as a principal surface. SOLUTION: A channel layer 4 is grown from a principal surface of a substrate 2 having a nonpolar surface as the principal surface and an electron confinement layer 5 is further grown on the channel layer 4 to form a nitride semiconductor stack structure portion 3 on one surface side of the substrate 2. When the channel layer 4 and electron confinement layer 5 are grown, molar fractions of group-III atoms of group-III nitride semiconductors constituting them are set to suitable values so that lattice constants of the group-III nitride semiconductors match each other. Consequently, the lattice matching-type electron confinement layer 5 whose (c)-axial lattice constant matches that of the channel layer 4 is formed on the channel layer 4. COPYRIGHT: (C)2009,JPO&INPIT
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