| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of filling plating in a through-hole of a silicon wafer having the through-hole without any overhang shape and any internal void. SOLUTION: The plating is performed by arranging towards a plating electrode side a plate with an opening at the same place as a through-hole opening in the silicon wafer by keeping a fixed distance and by making a plate opening consistent with the through-hole opening in the silicon wafer. A diameter of the plate opening is made somewhat smaller than a diameter R of the through-hole opening. When x/R is 0.1 to 0.3 where a difference between the diameter of the plate opening and the diameter R of the through-hole opening is set to 2x, and when a distance between the silicon wafer and a plate is set to 0.05 mm to 1.0 mm, the above described problem can be achieved. It is desirable that the plate is made of an insulator such as a porosity ceramic and a porous material, and a plating growth of a silicon wafer surface can be also suppressed. COPYRIGHT: (C)2009,JPO&INPIT |
