| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an information recording medium which attains compatibility between high linear speed rewriting and high signal reliability by providing a crystallization promoting material to an interface layer in contact with a recording layer. <P>SOLUTION: The information recording medium has an oxide dielectric layer containing an oxide D1 (D1 is an oxide having at least one element selected from Zr, Hf, Y, In, Al, Ti, Cr and Si) and an oxide D2 (D2 is an oxide having at least one element selected from Sb, Sn, Te and Bi) as a second interface layer 14 and a first interface layer 16. <P>COPYRIGHT: (C)2009,JPO&INPIT |
