发明名称 SUBSTRATE PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing device that suppresses or prevents the disturbance of an air current on a substrate. SOLUTION: The substrate processing device includes: a substrate rotating means for rotating a wafer W on a predetermined axis C1 of rotation; and a plurality of gas discharge nozzles that discharge gas toward the principal surface of the wafer W rotated by the substrate rotating means and to the downstream side of the wafer W in a direction of rotation by the substrate rotating means to form an air current on the principal surface of the wafer W in the direction of rotation of the wafer W. The velocity of the air current formed on the wafer W is equal to the peripheral speed of the wafer W at respective positions different in distances from the axis C1 of rotation of the wafer W. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009218403(A) 申请公布日期 2009.09.24
申请号 JP20080061055 申请日期 2008.03.11
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 NAGANORI ATSUO
分类号 H01L21/304;H01L21/027 主分类号 H01L21/304
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