| 摘要 |
<p>PURPOSE: A memory device with vertical channel and double split gates is provided to reduce the area per the unit cell. CONSTITUTION: The memory device with vertical channel and double split gates includes two Si-fins(11,12), the first and the second source/drain regions(51,52), the first and second select gates(31,32), the control gate(80), and the third source/drain region(60). Two Si-fins are formed between the trenches. The first and the second source/drain regions are formed in the upper part of each Si-fin. The first and the second selection gate are formed on the silicon. The control gate is formed by filling the trench. The third source/drain regions are formed at the floor of the trench.</p> |
