| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device such as a trench lateral-type power MOSFET or the like with a high breakdown voltage and a low on-state resistance, which improves a breakdown and a trade-off of the on-state resistance, and to provide a method of manufacturing the semiconductor device. SOLUTION: A thick oxide film 10 is locally formed on a sidewall of a peeler portion 30. Furthermore, by forming a p reduced surface field region 4 and a second n-th drain region 8, even if an impurity concentration of the second n-th drain region 8 is raised, a low on-state resistance is attained, while obtaining the high breakdown voltage. COPYRIGHT: (C)2009,JPO&INPIT
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