| 摘要 |
<p>A semiconductor device fabrication method according to an embodiment of the invention comprises: preparing a growth substrate having a single crystalline semiconductor film formed thereon, a support substrate and a temporary substrate; coupling the growth, support and temporary substrates by the medium of a functional wafer-bonded layer with the support substrate in-between; removing the growth substrate from the single crystalline semiconductor film; and removing the temporary substrate from the support substrate.</p> |
