| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To very simply and reliably write and read storage information without using a specific additional process or a specific material even if an existing MIS-type transistor is used as a main component. <P>SOLUTION: A P-type MOS transistor 21, which is the main component of a memory cell 10, functions as a storage element in the memory cell 10. When a prescribed high voltage is applied to the P-type MOS transistor 21, an I<SB>off</SB>leak due to HCI increases, that is, the so-called I<SB>off</SB>phenomenon occurs. The MOS transistor 21 is used as a storage element, in consideration that the I<SB>off</SB>leak phenomenon is stored in a P-type MIS transistor. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
