MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY DEVICE, AND METHOD OF MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element which has satisfactory magnetic characteristics by controlling the magnetic anisotropy of a ferromagnetic layer. SOLUTION: The magneto-resistance effect element 1 includes a pair of ferromagnetic layers facing each other with an intermediate layer therebetween and is configured to obtain a magneto-resistance change by causing a current to flow perpendicularly to a film surface, wherein one ferromagnetic layer is a magnetization fixed layer 5 and the other is a magnetization free layer 7, and the ferromagnetic layers 5 and 7 have amorphous or microcrystal structures and are subjected to heat treatment in a magnetic field at a temperature equal to or higher than 300°C and equal to or lower than a crystallization temperature of the magnetization free layer 7. COPYRIGHT: (C)2009,JPO&INPIT