发明名称 DISCREET PLACEMENT OF RADIATION SOURCES ON INTEGRATED CIRCUIT DEVICES
摘要 An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.
申请公布号 US2009236699(A1) 申请公布日期 2009.09.24
申请号 US20080051881 申请日期 2008.03.20
申请人 GORDON MICHAEL S;LABIANCA NANCY C;RODBELL KENNETH P 发明人 GORDON MICHAEL S.;LABIANCA NANCY C.;RODBELL KENNETH P.
分类号 H01L23/58;H01L21/00;H01L21/66 主分类号 H01L23/58
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