发明名称 |
DISCREET PLACEMENT OF RADIATION SOURCES ON INTEGRATED CIRCUIT DEVICES |
摘要 |
An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.
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申请公布号 |
US2009236699(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20080051881 |
申请日期 |
2008.03.20 |
申请人 |
GORDON MICHAEL S;LABIANCA NANCY C;RODBELL KENNETH P |
发明人 |
GORDON MICHAEL S.;LABIANCA NANCY C.;RODBELL KENNETH P. |
分类号 |
H01L23/58;H01L21/00;H01L21/66 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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