发明名称 |
Methods of Forming Metal Interconnect Structures on Semiconductor Substrates Using Oxygen-Removing Plasmas and Interconnect Structures Formed Thereby |
摘要 |
Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 Å to about 50 Å and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.
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申请公布号 |
US2009239374(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20080050354 |
申请日期 |
2008.03.18 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
KIM JAE HAK;BONILLA GRISELDA;MOLIS STEVEN E.;RESTAINO DARRYL D.;SHOBHA HOSADURGA;WIDODO JOHNNY |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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