发明名称 |
FET HAVING HIGH-K, VT MODIFYING CHANNEL AND GATE EXTENSION DEVOID OF HIGH-K AND/OR VT MODIFYING MATERIAL, AND DESIGN STRUCTURE |
摘要 |
A field effect transistor (FET) including a high dielectric constant (high-k), threshold voltage (Vt) modifying channel and a gate extension devoid of the high-k and/or Vt modifying material, and a related design structure, are disclosed. In one embodiment, a FET may include a gate having a channel region thereunder including a gate insulator portion of a high dielectric constant (high-k) material and a threshold voltage (Vt) modifying portion (e.g., of SiGe); and a gate extension having a region thereunder devoid of at least one of the high-k material or the Vt modifying portion.
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申请公布号 |
US2009236632(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20080051049 |
申请日期 |
2008.03.19 |
申请人 |
ANDERSON BRENT A;BRYANT ANDRES;NOWAK EDWARD J |
发明人 |
ANDERSON BRENT A.;BRYANT ANDRES;NOWAK EDWARD J. |
分类号 |
H01L29/778;H01L21/336 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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