METHOD FOR FABRICATING THROUGH-SUBSTRATE VIAS

摘要

A method for fabricating through substrate vias (75) is presented, whereby vias are etched from the backside of the substrate (5) down to STI (14) or the PMD (13). Extra contacts (50) between metal 1 contact pads (55) and the through-wafer 5 vias (75) are fabricated for realising the contact between the through wafer vias (75) and the back-end-of-line (3) of the semiconductor chips (11).