| 摘要 |
PURPOSE: A method for forming metal line with low-k in a semiconductor device is provided to easily manage the interlayer overlay. CONSTITUTION: The metal wirings(904,906) are formed on semiconductor substrate. The common mask is produced to form the air gap between the metal wirings. The first insulating layers filled between the metal wirings are etched using the air gap formation mask(902). The second insulating layers of the low-dielectric constant(low-k) are deposited on the semiconductor substrate. The air gap is formed according to the air gap formation mask pattern.
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