| 摘要 |
A light emitting device includes a silicon substrate ( 1 ), a silicon nitride film ( 2 ) formed on the surface of the silicon substrate ( 1 ), at least an n-type layer ( 3 ), ( 4 ) and a p-type layer ( 6 ), ( 7 ) which are formed on the silicon nitride film ( 2 ) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination ( 11 ) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film ( 2 ) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.
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