| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce film reduction during etching of a stress film by forming the stress film which has resistance to etching of a silicon oxide film. <P>SOLUTION: A semiconductor device has a sidewall insulating film 21 having a gate electrode formation groove 23 formed on a semiconductor substrate 11, a gate electrode 25 formed in the gate electrode formation groove 23 on the semiconductor substrate 11 with a gate insulating film 24 interposed, a first stress film 51 formed on a sidewall of the gate electrode 25 on the semiconductor substrate 11 with a sidewall insulating film 24 interposed and having stress, and a second stress film 52 formed on the semiconductor substrate 11 outside the first stress film 51 and having the same kind of stress with the first stress film 51. The first stress film 51 and second stress film 52 have etching resistance to etching seeds when the silicon oxide film is etched, and the first stress film 51 has larger etching resistance to the etching seeds than the second stress film 52. <P>COPYRIGHT: (C)2009,JPO&INPIT |
