| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reflective mask for EUV (extreme ultra violet) lithography which permits detection of an alignment mark by transmission. <P>SOLUTION: The reflective mask is provided with a substrate, a multi-layered film formed on one side of the substrate, an intermediate layer formed on the multi-layered film, an absorbing body formed on the substrate with the multi-layered film and the intermediate layer which are formed thereon in the shape of pattern, and a conductive film formed on the other side of the substrate. The pattern of the absorbing body constitutes a circuit pattern and the alignment mark while a reflective mask, characterized by the other side of the substrate which is exposed in an alignment region arranged with the alignment mark, is provided whereby the purpose is achieved. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
