发明名称 FILM FORMATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING ELECTRONIC EQUIPMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a film-forming device and a film formation method capable of improving a film formation atmosphere, and to form a film having good characteristics by the device and the method. <P>SOLUTION: The film-forming device performs heat treatment for a liquid material 3 arranged on a substrate S1 in a treatment chamber 11 to solidify the liquid material. In the treatment chamber, the device includes: a stage 15 on which the substrate is mounted; a heating means 15a for heating the substrate; a cover 17 for covering the substrate; a first supply means 19 for supplying inert gas N<SB>2</SB>into the cover; and a second supply means 40 for supplying other gases except the inert gas into the cover. By the device, the heat treatment is performed while the cover restricts ambient gas with which the liquid material on the substrate can come into contact, thus impurities, such as oxygen, is reduced which are taken into the film. Also, the device performs other treatments, such as oxidation treatment and mixing treatment of dopants, in the same device by supplying other gases. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009218431(A) 申请公布日期 2009.09.24
申请号 JP20080061604 申请日期 2008.03.11
申请人 SEIKO EPSON CORP 发明人 KATO MAKOTO;TANAKA HIDEKI
分类号 H01L21/208;B05C9/14;B05D3/04;H01L21/336;H01L29/786;H01L31/042 主分类号 H01L21/208
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