发明名称 |
EPITAXIAL MATERIAL USED FOR GAN BASED LED WITH LOW POLARIZATION EFFECT AND MANUFACTURING METHOD THEREOF |
摘要 |
A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4) and InGaAlN multi-quantum well structure light emitting layer (5) and p-type InGaAlN layer (6) on sapphire or SiC substrate (1) in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.
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申请公布号 |
US2009236586(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20070377196 |
申请日期 |
2007.08.15 |
申请人 |
INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCE |
发明人 |
CHEN HONG;JIA HAIQIANG;GUO LIWEI;WANG WENXIN;ZHOU JUNMING |
分类号 |
H01L29/15;H01L21/20;H01L33/00;H01L33/04;H01L33/06 |
主分类号 |
H01L29/15 |
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