发明名称 YTTRIUM OXIDE MATERIAL, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND MANUFACTURING PROCESS OF YTTRIUM OXIDE MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide an yttrium oxide material with enhanced strength and its manufacturing process. SOLUTION: The base body 22 for an electrostatic chuck 20 being a member of a semiconductor manufacturing apparatus is composed of an yttrium oxide material containing at least yttrium oxide (Y<SB>2</SB>O<SB>3</SB>), silicon carbide (SiC), and a compound containing an RE (rare-earth element), Si, O, and N. The yttrium oxide material contains an RE<SB>8</SB>Si<SB>4</SB>N<SB>4</SB>O<SB>14</SB>in which RE is La, Y and the like as the compound containing an RE (rare-earth element), Si, O, and N. The RE<SB>8</SB>Si<SB>4</SB>N<SB>4</SB>O<SB>14</SB>is a compound generated from Y<SB>2</SB>O<SB>3</SB>, the major ingredient of the raw material, Si<SB>3</SB>N<SB>4</SB>added as a raw material and the like during sintering. This compound and SiC contained in yttrium oxide improves the mechanical strength and the volume resistivity. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009215154(A) 申请公布日期 2009.09.24
申请号 JP20090026137 申请日期 2009.02.06
申请人 NGK INSULATORS LTD 发明人 KOBAYASHI YOSHIMASA;KATSUTA YUJI
分类号 C04B35/50;C23C16/44;H01L21/205;H01L21/3065;H01L21/683 主分类号 C04B35/50
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